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VBMB17R07 产品详细

产品简介:

Product Introduction: VBsemi's VBMB17R07 is a single N-channel power MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS, plus or minus) of 30V, and a threshold voltage of 3.5V (Vth). Using Plannar technology, packaged as TO220F.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS, plus or minus): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=4.5V: 1000m次
- On-resistance when VGS=10V: 800m次
- Maximum drain current (ID): 7A

领域和模块应用:

Examples of applicable fields and modules:
1. Power inverter: Since VBMB17R07 has a high drain-source voltage and moderate drain current, it can be used to design power inverters to convert DC power into AC power, and is suitable for solar power generation systems, wind power generation systems, etc. .
2. Electric vehicle charger: In electric vehicle chargers, power MOSFETs that can withstand high voltage and current are required. VBMB17R07 can be used to design the power switch circuit of the charger to provide efficient and stable charging performance.
3. Industrial automation equipment: VBMB17R07 is suitable for power switch modules in industrial automation equipment, such as motor control, industrial furnace control, etc., providing reliable power regulation and control functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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