产品简介:
Product introduction:
VBMB17R06 is a single N-channel field effect transistor (MOSFET) produced by VBsemi, using Plannar technology. The device has a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a gate-source voltage threshold of 3.5V. Its on-resistance (RDS(on)) at 10V gate-source voltage is 1900mΩ, and its maximum on-current (ID) is 6A. The packaging form of this product is TO220F. It is suitable for multiple fields and modules, and has broad application prospects in the fields of industrial power supply, electric vehicles, wind energy generation and industrial automation control.
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产品参数:
Detailed parameter description:
- Product model: VBMB17R06
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Technology: Plannar
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Gate-source voltage threshold (Vth): 3.5V
- On-resistance (RDS(on)) when gate-source voltage is 10V: 1900m次
- Maximum on-current (ID): 6A
-Package: TO220F
领域和模块应用:
Examples of applicable fields and modules:
1. Industrial power module: VBMB17R06 is suitable for switching power supplies and inverter modules in industrial power modules, and is used for stable power supply in factory automation equipment, communication base stations and other fields.
2. Electric vehicle battery management: In the battery management system of electric vehicles, the MOSFET can be used in the charge and discharge management module of the battery pack to achieve precise control and protection of the battery status.
3. Wind energy power generation system: suitable for power switch modules in wind energy power generation systems, used to control the power output of wind turbines and the conversion of wind energy.
4. Industrial automation control: In industrial automation and control systems, VBMB17R06 can be used as a switching device to achieve precise control and regulation of various equipment and machinery.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性