产品参数:
Detailed parameter description:
- Model: VBMB17R04SE
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO220F
- Technology: SJ_Deep-Trench
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 1200 m次
- Maximum drain current (ID): 4A
领域和模块应用:
Examples of applicable fields and modules:
1. Low-power switching circuit: Because VBMB17R04SE has lower on-resistance and smaller drain current capability, it is suitable for low-power switching circuits, such as power management and circuit protection.
2. LED driver: In LED lighting applications, low-power and high-efficiency switching devices are required to control the brightness of LEDs. VBMB17R04SE can be used as a power switching element in LED drivers.
3. Consumer electronics: The packaging and parameters of VBMB17R04SE make it suitable for power switching modules in consumer electronics, such as power management and power conversion in laptops, tablets and smartphones.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性