MOSFET

您现在的位置 > 首页 > MOSFET

VBMB17R04 产品详细

产品简介:

Product introduction:
VBsemi's VBMB17R04 is a single N-channel field effect transistor manufactured using Plannar technology. It has a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. The product is packaged in TO220F and has a drain current (ID) of 4A and an on-resistance of 2600mΩ (VGS=10V).

文件下载

下载PDF 文档
立即下载

产品参数:

Detailed parameter description:
- Product model: VBMB17R04
- Brand: VBsemi
- Structure: Single N-channel field effect transistor
- VDS (drain-source voltage): 700V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On resistance (VGS=10V): 2600m次
- Drain current (ID): 4A
- Technology: Plannar
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
1. Power management module: The high voltage tolerance and moderate drain current of VBMB17R04 make it suitable for power management module, which is used to regulate and control the voltage and current in the power system to ensure the stable operation of electronic equipment.
2. LED driver: Due to its stable performance and high voltage withstand capability, this product can be used in LED driver modules to provide stable power output for LED lighting systems.
3. Power tools: VBMB17R04 can be used as a power control module in power tools to control the start and stop of the motor and ensure the safe and efficient operation of the power tool.
4. Power inverter: This product is suitable for power inverter modules to convert DC power into AC power and is used in solar power generation systems, electric vehicle chargers and other fields to achieve energy conversion and storage.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询