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VBMB17R02 产品详细

产品简介:

Product introduction:

VBsemi's VBMB17R02 model is a single N-channel power MOSFET designed for high performance and reliability. Using Plannar technology, this product has excellent conduction characteristics and stable performance. Suitable for various power applications, providing reliable power control and protection functions.

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产品参数:

Detailed parameter description:

- Brand: VBsemi
- Product model: VBMB17R02
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 6500m次
- Maximum drain current (ID): 2A
- Technology: Plannar
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:

1. Power module: VBMB17R02 can be used in switching power supplies and inverters in various power modules to ensure high efficiency and stable performance.
2. Electric vehicle control system: This product is suitable for the motor drive system and battery management module of electric vehicles, providing reliable power control and protection functions.
3. Industrial automation equipment: used in power modules and drivers in industrial automation equipment to ensure stable operation and high-efficiency conversion of the equipment.
4. Solar inverter: VBMB17R02 can be used in solar inverters to convert DC power generated by solar panels into AC power to achieve high-efficiency conversion of solar power generation systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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