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VBMB175R04 产品详细

产品简介:

Product introduction:
VBMB175R04 is a single N-channel field effect transistor (MOSFET) produced by VBsemi, using Plannar technology. The device has a drain-source voltage (VDS) of 750V, a gate-source voltage (VGS) of 30V, and a gate-source voltage threshold of 3.2V. The on-resistance (RDS(on)) at 10V gate-source voltage is 2700mΩ, and the maximum on-current (ID) is 4A. The packaging form of this product is TO220F.

VBMB175R04 is suitable for industrial power supplies, electric vehicle charging piles, solar inverters, industrial automation control and other fields, and has broad application prospects.

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产品参数:

Detailed parameter description:
- Product model: VBMB175R04
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Technology: Plannar
- Drain-source voltage (VDS): 750V
- Gate-source voltage (VGS): 30V
- Gate-source voltage threshold (Vth): 3.2V
- On-resistance (RDS(on)) when gate-source voltage is 10V: 2700m次
- Maximum on-current (ID): 4A
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
1. Power switch module: VBMB175R04 is suitable for switching power supplies and inverter modules in industrial power modules and communication equipment, providing stable power output.
2. Electric vehicle charging piles: In electric vehicle charging piles, this MOSFET can be used in the power control module to ensure the safe charging and management of electric vehicles.
3. Solar inverter: It is suitable for the power switch module in the solar inverter to convert the DC power generated by the solar panel into AC power for use in the solar power generation system.
4. Industrial automation control: In industrial automation and control systems, VBMB175R04 can be used as a switching device to achieve precise control and regulation of various equipment and machinery.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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