产品简介:
Product introduction:
VBMB175R04 is a single N-channel field effect transistor (MOSFET) produced by VBsemi, using Plannar technology. The device has a drain-source voltage (VDS) of 750V, a gate-source voltage (VGS) of 30V, and a gate-source voltage threshold of 3.2V. The on-resistance (RDS(on)) at 10V gate-source voltage is 2700mΩ, and the maximum on-current (ID) is 4A. The packaging form of this product is TO220F.
VBMB175R04 is suitable for industrial power supplies, electric vehicle charging piles, solar inverters, industrial automation control and other fields, and has broad application prospects.
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