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VBMB16R34SFD 产品详细

产品简介:

Product introduction:
VBMB16R34SFD is a Single N-type MOSFET produced by VBsemi, manufactured using SJ_Multi-EPI technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO220F.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 80m次
- Maximum drain current (ID): 34A
- Technology: SJ_Multi-EPI

领域和模块应用:

Application example:
- Power module: Since VBMB16R34SFD has a high drain-source voltage and a large drain current, it is suitable for various power modules, such as switching power supplies, inverters and frequency converters.
- Automotive Electronics: The device can be used in applications such as motor control, battery management and power switching in automotive electronic systems.
- Industrial automation: In the field of industrial automation, VBMB16R34SFD can be used to control high-power equipment and perform industrial automation tasks.
- LED lighting: As a key component of the LED drive circuit, this device can be used in LED lighting systems to provide efficient power switching and dimming functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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