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VBMB16R18S 产品详细

产品简介:

Product introduction: VBMB16R18S is a VBsemi brand single N-type field effect transistor, which is packaged as TO220F using SJ_Multi-EPI technology. Features 600V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), 230mΩ (VGS=10V) on-resistance, and 18A drain current (ID) .

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 230m次
- Drain current (ID): 18A
- Technology: SJ_Multi-EPI
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
1. Low-power power module: suitable for low-power power inverter, DC-DC converter and other modules, providing stable power conversion and power control.
2. Power tools: It can be used in motor drive modules in various power tools to achieve efficient driving and control of power tools.
3. Household appliances: In household appliances, it can be used in power switch modules, such as power inverters, fan speed regulators, etc., to achieve power control and regulation of electrical appliances.
4. Power management module: suitable for low-power power management systems, such as battery management systems, small UPS systems, etc., to provide stable power management and protection functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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