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VBMB16R11SE 产品详细

产品简介:

Product introduction: VBMB16R11SE is a VBsemi brand single N-type field effect transistor, which is packaged as TO220F using SJ_Deep-Trench technology. Features 600V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), 310mΩ (VGS=10V) on-resistance, and 11A drain current (ID) .

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 310m次
- Drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
1. Lighting control: It can be used in modules such as LED lighting drivers and light regulators to provide stable power control and light adjustment functions.
2. Power management module: suitable for low-power power management systems, such as battery management systems, small UPS systems, etc., to provide stable power management and protection functions.
3. Power tools: Motor drive modules in various power tools realize efficient driving and control of power tools.
4. Industrial control system: Suitable for power switch modules in industrial control systems, providing precise control of motors and equipment, improving production efficiency and energy utilization.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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