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VBMB16R11 产品详细

产品简介:

Product introduction:
VBsemi's VBMB16R11 is a single N-channel field effect transistor (MOSFET) manufactured using a planar process. It has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 11A. This product is packaged in TO220F and is suitable for a variety of application scenarios.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 800
- Drain current (ID): 11A
- Technology: Flat process
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
1. Power supply module: The high drain-source voltage and large drain current of VBMB16R11 make it very suitable for use in power switching circuits, such as switching power supplies and inverters.
2. Motor Drivers: Due to its high voltage and current capabilities, this MOSFET can be used in power amplifiers in motor drivers to achieve high performance and reliability.
3. LED lighting control: VBMB16R11 can be used as current regulator and switch controller in LED lighting systems to provide stable lighting output.
4. Industrial automation: In industrial control systems, this MOSFET can be used in modules such as switching power supplies, inverters and motor controllers to achieve efficient power conversion and precise control.

These areas and modules are just some examples of where the VBMB16R11 may be suitable, the actual application depends on the specific circuit design and requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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