产品参数:
Detailed parameter description:
- Product model: VBMB16R10
- Brand: VBsemi
- Structure type: Single N-channel field effect transistor (MOSFET)
- Rated voltage (VDS): 600V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance at 10V (m次): 1000
- Rated drain current (ID): 10A
- Process technology: flat process
- Package type: TO220F
领域和模块应用:
Examples of application areas:
1. Industrial electronics: VBMB16R10 can be used in industrial power supplies, motor drives, frequency converters and other equipment to provide reliable power control and protection functions.
2. Automotive electronics field: Under the trend of vehicle electrification, VBMB16R10 can be used in applications such as motor drive systems and charging piles of electric vehicles, with high performance and reliability.
3. Solar energy field: As a switching element in solar inverters, VBMB16R10 can provide stable power conversion efficiency and is suitable for DC-AC conversion modules in solar power generation systems.
4. Communication field: In electronic equipment such as power modules, inverters and DC voltage regulators used in communication base stations, VBMB16R10 can provide efficient and stable power conversion and control functions to meet the power density and reliability requirements of communication equipment. .
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性