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VBMB16R10 产品详细

产品简介:

Product introduction:

VBsemi's VBMB16R10 model is a single N-channel field effect transistor (MOSFET) with excellent performance and reliability. Manufactured using planar technology and packaged as TO220F, it is suitable for various power electronic applications.

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产品参数:

Detailed parameter description:

- Product model: VBMB16R10
- Brand: VBsemi
- Structure type: Single N-channel field effect transistor (MOSFET)
- Rated voltage (VDS): 600V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance at 10V (m次): 1000
- Rated drain current (ID): 10A
- Process technology: flat process
- Package type: TO220F

领域和模块应用:

Examples of application areas:

1. Industrial electronics: VBMB16R10 can be used in industrial power supplies, motor drives, frequency converters and other equipment to provide reliable power control and protection functions.

2. Automotive electronics field: Under the trend of vehicle electrification, VBMB16R10 can be used in applications such as motor drive systems and charging piles of electric vehicles, with high performance and reliability.

3. Solar energy field: As a switching element in solar inverters, VBMB16R10 can provide stable power conversion efficiency and is suitable for DC-AC conversion modules in solar power generation systems.

4. Communication field: In electronic equipment such as power modules, inverters and DC voltage regulators used in communication base stations, VBMB16R10 can provide efficient and stable power conversion and control functions to meet the power density and reliability requirements of communication equipment. .
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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