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VBMB16R08SE 产品详细

产品简介:

Product introduction:

VBsemi's VBMB16R08SE is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Deep-Trench technology and is packaged as TO220F.

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产品参数:

Detailed parameter description:

- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 460
- Maximum drain current (ID): 8A

领域和模块应用:

Examples of applicable fields and modules:

- Power management module: Suitable for low-power power management modules, such as mobile phone chargers, laptop adapters, etc., providing efficient power conversion and stable output voltage.
- Automotive electronic systems: Can be used for power management and drive control in automotive electronic systems, such as automotive lighting control, electric vehicle chargers, etc.
- Industrial control system: Suitable for power switches and motor control in industrial control systems, such as industrial automation equipment, robot control systems, etc.
- LED lighting system: In the LED lighting system, it can be used as a switching tube for the LED driver to achieve efficient LED light source control and adjustment, and improve the energy efficiency and reliability of the lighting system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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