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VBMB16R08 产品详细

产品简介:

Product introduction:

VBMB16R08 is a single N-channel MOSFET launched by the VBsemi brand, with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It uses planar structure technology and is packaged as TO220F.

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产品参数:


Detailed parameter description:

- Product model: VBMB16R08
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 600V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 880m次
- Maximum drain current (ID): 8A
- Technology: Flat Structure
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:

1. Power module: VBMB16R08 can be used as a power switch module in switching power supplies to convert input voltage to the required output voltage, such as DC-DC converters and AC-DC converters.
2. Motor drive: Due to its high voltage and low on-resistance characteristics, this MOSFET is suitable for motor drive modules to control the start, stop and speed adjustment of the motor.
3. Lighting control: In LED lighting systems, VBMB16R08 can be used as a dimming control module to achieve light brightness adjustment and energy-saving functions.
4. Electric vehicle charging pile: The charging module used in the electric vehicle charging pile controls the charging current and voltage to ensure a safe and efficient charging process.

The above are some application examples of VBMB16R08 products in different fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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