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VBMB16R07 产品详细

产品简介:

Product introduction:
VBMB16R07 is a single N-channel field effect transistor launched by the VBsemi brand, packaged in TO220F. It features a drain-source voltage (VDS) of up to 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. In addition, its on-resistance is 1200mΩ when the gate-to-source voltage is 10V, and the maximum drain current (ID) is 7A. This product is manufactured using a flat process.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 1200m次
- Maximum drain current (ID): 7A
- Manufacturing process: flat process
-Package: TO220F

领域和模块应用:

Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and low on-resistance, it can be used to design high-performance power management modules, such as switching power supplies and DC-DC converters.
2. Automotive electronic modules: In the field of automotive electronics, this product can be used in modules such as electric vehicle charging piles and DC motor drivers in vehicle electrical systems to achieve high efficiency and high reliability.
3. Industrial control system: Due to its high voltage and high current characteristics, it can be used in modules such as motor control, industrial lighting and power transmission in the field of industrial automation.
4. Solar inverter: As one of the key components of the solar inverter, this product can provide stable voltage output and efficient energy conversion, thereby improving the performance and reliability of the solar power generation system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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