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VBMB16R02 产品详细

产品简介:

Product introduction:

The VBsemi brand VBMB16R02 is a single N-channel MOSFET device offering high performance and reliability. Manufactured using Plannar technology and packaged as TO220F. The device has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and an on-resistance of 4000mΩ at VGS=4.5V and 4000mΩ at VGS=10V. The on-resistance is 3200mΩ and the maximum drain current (ID) is 2.4A.

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产品参数:

Detailed parameter description:

- Product model: VBMB16R02
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=4.5V: 4000m次
- On-resistance at VGS=10V: 3200m次
- Maximum drain current (ID): 2.4A
- Manufacturing process: Plannar
-Package form: TO220F

领域和模块应用:

Examples of applicable fields and modules:

1. Low-power power module: Because VBMB16R02 has low leakage current and moderate power characteristics, it is suitable for various low-power power modules, such as small inverters, chargers, etc.
2. Power tools: In power tools, this device can be used in motor control modules, such as electric drills, electric shears, etc., to provide efficient power output and control.
3. LED lighting control: In LED lighting systems, VBMB16R02 can be used to control the power switch of LED lamps to achieve stable driving and brightness adjustment of LED light sources.
4. Low-power electronic products: Suitable for various low-power electronic products, such as portable electronic devices, smart home products, etc., to provide stable power control and protection.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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