产品参数:
Detailed parameter description:
- Product model: VBMB16R02
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=4.5V: 4000m次
- On-resistance at VGS=10V: 3200m次
- Maximum drain current (ID): 2.4A
- Manufacturing process: Plannar
-Package form: TO220F
领域和模块应用:
Examples of applicable fields and modules:
1. Low-power power module: Because VBMB16R02 has low leakage current and moderate power characteristics, it is suitable for various low-power power modules, such as small inverters, chargers, etc.
2. Power tools: In power tools, this device can be used in motor control modules, such as electric drills, electric shears, etc., to provide efficient power output and control.
3. LED lighting control: In LED lighting systems, VBMB16R02 can be used to control the power switch of LED lamps to achieve stable driving and brightness adjustment of LED light sources.
4. Low-power electronic products: Suitable for various low-power electronic products, such as portable electronic devices, smart home products, etc., to provide stable power control and protection.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性