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VBMB165R42SFD 产品详细

产品简介:

Product introduction: VBMB165R42SFD is a VBsemi brand single N-type field effect transistor produced by Shenzhen Weibi Semiconductor Co., Ltd. The device uses SJ_Multi-EPI technology and is packaged in TO220F. Features 650V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), 56mΩ (VGS=10V) on-resistance, and 42A drain current (ID) .

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 56m次
- Drain current (ID): 42A
- Technology: SJ_Multi-EPI
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
1. Power management module: Due to its high drain-source voltage and high current capability, it can be used in power management modules such as switching power supplies, inverters and DC-DC converters.
2. Electric vehicle charging piles: It has high drain-source voltage and conduction current, and is suitable for power switches and inverter modules in electric vehicle charging piles.
3. Industrial automation: It can be used in fields such as industrial drives, motor controls, and power inverters to achieve high-efficiency and high-power-density power conversion.
4. Solar Inverter: In a solar power generation system, a solar inverter can be used to convert DC power into AC power and inject it into the grid.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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