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VBMB165R38SFD 产品详细

产品简介:

Product introduction:
The VBMB165R38SFD is a single N-channel MOSFET model produced by VBsemi. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 38A. Manufactured using SJ_Multi-EPI technology. The device is packaged in TO220F.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 67
- Drain current (ID): 38A
- Technology: SJ_Multi-EPI

领域和模块应用:

Examples of applicable fields and modules:
1. Power supply module: The high drain-source voltage and high current characteristics of VBMB165R38SFD make it very suitable for power supply modules such as power inverters and switching power supplies.
2. Automotive electronic systems: Due to its high voltage and high current capabilities, this device is often used in electric vehicle charging piles and electric vehicle control modules in automotive electronic systems.
3. Industrial control system: VBMB165R38SFD can be used in power switching devices in industrial control systems, such as frequency converters and motor drivers.
4. Solar Inverter: Its high voltage and high current characteristics make it an ideal choice in solar inverter for converting DC power generated by solar panels into AC power.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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