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VBMB165R34SFD 产品详细

产品简介:

Product introduction:
VBMB165R34SFD is a single N-channel MOSFET model produced by VBsemi. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 34A. Manufactured using SJ_Multi-EPI technology and packaged as TO220F.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 80
- Drain current (ID): 34A
- Technology: SJ_Multi-EPI

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power module: Due to its high drain-source voltage and moderate drain current characteristics, VBMB165R34SFD can be used in industrial power modules, such as inverters and UPS power supplies.
2. Wind energy conversion system: This device is suitable for power switching devices in wind energy conversion systems and is used to control the output current of wind turbines.
3. Electric vehicle charging piles: The high voltage and current characteristics of VBMB165R34SFD make it an ideal choice for electric vehicle charging piles to achieve fast charging of electric vehicles.
4. Solar inverter: This device can be used in solar inverters to convert DC power generated by solar panels into AC power.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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