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VBMB165R32SE 产品详细

产品简介:

Product introduction:
VBsemi VBMB165R32SE is a Single N MOSFET, using SJ_Deep-Trench technology and packaged in TO220F. Offers high performance and stability for a variety of power control and switching applications.

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产品参数:

Detailed parameter description:
- Brand: VBsemi
- Product model: VBMB165R32SE
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 89m次
- Maximum continuous drain current (ID): 32A
- Technology: SJ_Deep-Trench
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial motor drive: VBMB165R32SE can be used in industrial motor drives, such as motor controllers and frequency converters, to ensure efficient operation and precise control of the motor system.
2. Electric vehicles: In the power conversion module of electric vehicles, VBMB165R32SE can be used as a key switching element to achieve efficient energy conversion between the battery pack and the motor.
3. Solar inverter: As a key component in solar inverter, VBMB165R32SE can realize the conversion and transmission of solar energy and is suitable for solar power generation systems.
4. Power module: VBMB165R32SE can be used in switching power supplies, inverters and voltage regulators in various power modules, and is suitable for industrial control, communication equipment and electronic equipment.

*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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