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VBMB165R32S 产品详细

产品简介:

Product introduction: VBMB165R32S is a VBsemi brand single N-type field effect transistor, which is packaged as TO220F using SJ_Multi-EPI technology. Features 650V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), 85mΩ (VGS=10V) on-resistance, and 32A drain current (ID) .

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产品参数:

Detailed parameter description:
- Drain-Source Voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 85m次
- Drain current (ID): 32A
- Technology: SJ_Multi-EPI
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
1. Power management module: It can be used in power management modules such as switching power supplies, inverters and DC-DC converters to achieve efficient power conversion and power control.
2. Automotive electronic systems: Suitable for drive systems, charging piles and battery management systems of electric vehicles, providing stable power supply and efficient power control.
3. Industrial automation equipment: In the fields of industrial drives, motor controls and power inverters, high power density power conversion and precise motor control can be achieved.
4. Solar and wind energy converters: used in solar inverters, wind power inverters and other fields to convert renewable energy into usable electrical energy and inject it into the grid.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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