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VBMB165R26S 产品详细

产品简介:

Product introduction:
VBsemi's VBMB165R26S is a high-performance single N-channel power field effect transistor (FET) suitable for a variety of application scenarios. This product adopts SJ_Multi-EPI technology and has excellent performance and reliability. It is widely used in various electronic applications that require high-performance power control and switching functions, including power management, industrial control, electric vehicle charging and other fields.

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产品参数:

Detailed parameter description:
- Product model: VBMB165R26S
- Brand: VBsemi
- Package: TO220F
- Type: Single N-channel power field effect transistor (FET)
- Rated voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V (m次): 115
- Rated current (ID): 26A
- Technology: SJ_Multi-EPI

领域和模块应用:

Examples of applicable fields and modules:
1. **Power Management Module**: VBMB165R26S can be used in various power management modules, such as switching power supplies, DC-DC converters, etc., and plays an important role in power conversion and stable output.
2. **Industrial control system**: In industrial automation and control systems, this product can be used to drive various loads, such as motors, valves, etc., to provide reliable power control.
3. **Charger and Inverter**: As a key component of chargers and inverters, VBMB165R26S can withstand high voltage and high current to achieve efficient power conversion.
4. **Electric vehicle charging pile**: This product can be used in the power switch and control module of electric vehicle charging piles to ensure the safety and efficiency of the charging process.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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