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VBMB165R22 产品详细

产品简介:

Product introduction: VBsemi's VBMB165R22 is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It is manufactured using planar technology and has a TO220F package, suitable for a variety of application scenarios.

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产品参数:

Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V.
- Threshold voltage: Vth (threshold voltage) is 3.5V.
- Current parameters: When VGS=10V, the minimum resistance at turn-on is 280m次, and the maximum drain current is 22A.

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial motor drive: VBMB165R22 has high current and voltage tolerance and is suitable for power switch modules in industrial motor drives to provide reliable power control.
2. High-performance power supply: Its low on-resistance and high drain current make it an ideal choice in high-performance power supply systems, ensuring efficient energy conversion and stable output.
3. Automotive electronics: In automotive electronic systems, VBMB165R22 can be used in power battery management and electric drive modules of electric vehicles to provide reliable power transmission and control.

The above is an introduction to VBsemi's VBMB165R22 product, detailed parameter descriptions, and examples of applicable fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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