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VBMB165R20SE 产品详细

产品简介:

Product introduction:
VBMB165R20SE is a VBsemi brand Single N MOSFET with a voltage resistance of 650V, a maximum gate-source voltage of 30V, and a threshold voltage of 3.5V. This device uses SJ_Deep-Trench technology and is packaged in TO220F. Suitable for a variety of power supply and power control applications.

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产品参数:

Detailed parameter description:
- Model: VBMB165R20SE
- Brand: VBsemi
- Type: Single N MOSFET
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-to-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V: 150m次
- Maximum drain current (ID): 20A
- Technology: SJ_Deep-Trench
-Package: TO220F

领域和模块应用:

Sample Application:
1. Power module: VBMB165R20SE is suitable for power switches in power modules, such as inverters and switching power supplies, providing reliable power conversion and control functions.
2. Electric vehicle controller: In the electric vehicle controller, this device can be used in motor drive and battery management systems to achieve efficient energy conversion and power output control.
3. Solar inverter: In solar photovoltaic systems, VBMB165R20SE can be used in the DC-AC conversion stage of the inverter to convert solar energy into usable alternating current.
4. Industrial automation equipment: This device is suitable for power switch modules in industrial robots, automation equipment, PLC and other systems, providing reliable power control and protection functions.
5. LED lighting system: As a power switching device in LED lighting systems, VBMB165R20SE can be used in LED drive circuits to achieve lighting brightness adjustment and energy-saving functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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