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VBMB165R20 产品详细

产品简介:

Product introduction:
VBsemi's VBMB165R20 is a single N-channel MOSFET with excellent performance and reliability. Manufactured using Plannar technology and packaged in TO220F, it is suitable for various applications.

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产品参数:

Detailed parameter description:
- Brand: VBsemi
- Model: VBMB165R20
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 320m次
- Maximum drain current (ID): 20A
- Technology: Plannar
-Package: TO220F

领域和模块应用:

Application example:
The product is suitable for multiple areas and modules, such as:
- Power management module: Due to its high voltage and high current characteristics, it can be used in power management applications such as switching power supplies, inverters and voltage regulators.
- Electric vehicle control system: It can be used as a drive controller for electric vehicles to achieve efficient energy conversion and motor control.
- Industrial automation field: suitable for power switches and control circuits in automation equipment such as industrial robots, PLC controllers and motor drivers.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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