产品参数:
Detailed parameter description:
- Brand: VBsemi
- Model: VBMB165R20
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 320m次
- Maximum drain current (ID): 20A
- Technology: Plannar
-Package: TO220F
领域和模块应用:
Application example:
The product is suitable for multiple areas and modules, such as:
- Power management module: Due to its high voltage and high current characteristics, it can be used in power management applications such as switching power supplies, inverters and voltage regulators.
- Electric vehicle control system: It can be used as a drive controller for electric vehicles to achieve efficient energy conversion and motor control.
- Industrial automation field: suitable for power switches and control circuits in automation equipment such as industrial robots, PLC controllers and motor drivers.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性