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VBMB165R18 产品详细

产品简介:

VBsemi's VBMB165R18 is a single N-channel field effect transistor with a drain-source voltage of 650V, a gate-source voltage of 30V, and a threshold voltage of 3.5V. This product adopts planar technology and is packaged as TO220F.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 420(mΩ)

- Maximum drain current (ID): 18A
- Technology: Planar Technology

领域和模块应用:

This product is suitable for the following areas and modules:
- Power management systems: Due to its high drain-source voltage and large drain current, it is suitable for power switching and regulation modules.
- Electric vehicles: Can be used in electric motor drives and battery management systems for electric vehicles, providing high efficiency and performance.
- Industrial automation: It can be used in fields such as industrial motor drives, frequency converters and UPS systems to provide reliable power conversion and control.

*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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