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VBMB165R15SE 产品详细

产品简介:

Product introduction:

VBMB165R15SE is a single N-type field effect transistor produced by VBsemi brand. It adopts SJ_Deep-Trench technology and is packaged as TO220F. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 15A. The VBMB165R15SE product has high drain current and low drain resistance and is suitable for a variety of fields and modules.

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产品参数:

Detailed parameter description:

1. VDS (drain-source voltage): 650V
2. VGS (gate-source voltage): ㊣30V
3. Vth (threshold voltage): 3.5V
4. Drain resistance (m次) when VGS=10V: 220m次
5. ID (drain current): 15A
6. Technology: SJ_Deep-Trench
7. Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:

1. Power switch module: VBMB165R15SE can be used as a switching power supply in the power switch module to provide stable power output and is suitable for industrial equipment and electronic systems.
2. Electric vehicle controller: In electric vehicle controllers, this type of transistor can be used for motor drive and power control of electric vehicles to improve the vehicle's power performance and energy efficiency.
3. Automobile engine control module: Suitable for power management and circuit protection in automobile engine control modules to ensure the safe operation and stability of the automobile engine system.
4. Industrial automation system: In industrial automation systems, VBMB165R15SE can be used for various motor controls, switches and adjustments to help realize automation and intelligence in industrial production.

The above is an introduction to the VBMB165R15SE product, detailed parameter descriptions, and examples of applicable fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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