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VBMB165R12 产品详细

产品简介:

Product introduction: VBsemi's VBMB165R12 is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It is manufactured using planar technology and has a TO220F package, suitable for various application scenarios.

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产品参数:

Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V.
- Threshold voltage: Vth (threshold voltage) is 3.5V.
- Current parameters: When VGS=10V, the minimum resistance at turn-on is 680m次, and the maximum drain current is 12A.

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power supply: Due to its high voltage and current characteristics, VBMB165R12 can be used in switching power supply modules in industrial power supplies to provide reliable power conversion.
2. Electric vehicle charger: Its high voltage and tolerance make it a key component in electric vehicle chargers, ensuring efficient and safe battery charging.
3. Solar inverter: In the solar inverter, VBMB165R12 can be used as a switching tube to convert the DC power generated by the solar panel to AC power and promote the utilization of renewable energy.

The above is an introduction to VBsemi's VBMB165R12 product, detailed parameter descriptions, and examples of applicable fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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