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VBMB165R11SE 产品详细

产品简介:

Product Introduction: VBsemi’s VBMB165R11SE model is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V . This product is manufactured using SJ_Deep-Trench technology and is packaged as TO220F.

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产品参数:

Detailed parameter description:
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 290m次
- Maximum drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
- Power modules: Due to the drain-source voltage up to 650V and the maximum drain current of 11A, it is suitable for high-power power modules such as industrial power supplies and electric vehicle chargers.
- Electric vehicle drive system: It can be used as a power switch module in the electric vehicle drive system to achieve efficient driving and control of electric vehicles.
- Solar inverter: SJ_Deep-Trench technology and low on-resistance make it suitable for power switching modules in solar inverters to achieve high-efficiency energy conversion.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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