产品参数:
Detailed parameter description:
- Product model: VBMB165R11S
- Brand: VBsemi
- Structure type: Single N-channel field effect transistor (MOSFET)
- Rated voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance at 10V (m次): 420
- Rated drain current (ID): 11A
- Process technology: SJ_Multi-EPI
- Package type: TO220F
领域和模块应用:
Examples of application areas:
1. Power module: VBMB165R11S is suitable for various power modules, such as industrial power supply, communication power supply, etc., and can be used for stable power supply and power management.
2. Automotive electronic systems: In automotive electronic systems, VBMB165R11S can be used in engine control units (ECUs), electric vehicle controllers (EVC), charging piles and other circuits for power transmission and power control.
3. Industrial driver: As a power switching component in industrial drivers, VBMB165R11S can be used in motor control, frequency converters, motor drives and other fields to achieve precise control and high-efficiency conversion.
4. Solar inverter: In solar power generation systems, VBMB165R11S can be used in inverters to convert DC power into AC power to provide power for home, commercial and industrial purposes.
5. Consumer electronics: such as LED lighting fixtures, household appliances, etc., VBMB165R11S can be used in power switching circuits, power management circuits, etc. to improve the performance and stability of the equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性