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VBMB165R11 产品详细

产品简介:

Product introduction:
VBsemi's VBMB165R11 is a Single N field effect transistor manufactured using Plannar technology. Features a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. At VGS=10V, the drain-source resistance (RDS(on)) is 800mΩ and the maximum drain current (ID) is 11A. The package form is TO220F.

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产品参数:

Detailed parameter description:
- Voltage parameters: drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ㊣30V, threshold voltage (Vth) is 3.5V.
- Current parameters: When VGS=10V, the drain-source resistance (RDS(on)) is 800m次, and the maximum drain current (ID) is 11A.
- Technology: Made with Plannar technology.

领域和模块应用:

Examples of applicable fields and modules:
1. Electric vehicle drive: Because VBMB165R11 has high drain-source voltage and current capabilities, it can be used as a power switch module in an electric vehicle drive system to achieve motor control and energy conversion.
2. High-power power module: In industrial applications, this device can be used in high-power power modules, such as high-power DC-DC converters or inverters, to meet the power needs of industrial equipment.
3. Solar inverter: In solar power generation systems, VBMB165R11 can be used as the power switch module in the inverter to convert solar energy into usable electrical energy to provide clean energy for home or commercial purposes.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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