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VBMB165R10S 产品详细

产品简介:

Product introduction:
VBsemi's VBMB165R10S is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 10A. Using SJ_Multi-EPI technology, the package is TO220F.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 360
- Drain current (ID): 10A
- Technology: SJ_Multi-EPI
-Package: TO220F

领域和模块应用:

Examples of application areas and modules:
1. High-voltage power module: Because VBMB165R10S has high drain-source voltage and drain current, it is suitable for the design of high-voltage power modules, such as electric vehicle charging piles, industrial power supplies, etc.
2. Inverter module: The high withstand voltage and low on-resistance characteristics of VBMB165R10S make it suitable for inverter modules and can be used in solar inverters, variable frequency air conditioners and other fields.
3. Consumer electronic products: Because its package is TO220F, it is suitable for power switch modules of some consumer electronic products, such as induction cookers, variable frequency electric fans, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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