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VBMB165R10 产品详细

产品简介:

Product introduction:
VBMB165R10 is a VBsemi brand single N-channel MOSFET using Plannar technology for high performance and reliability. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Its package is TO220F, which is suitable for various application scenarios.

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产品参数:

Detailed parameter description:
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 830
- Maximum drain current (ID): 10A
- Technology: Plannar
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
1. Power inverter module: VBMB165R10 is suitable for power switches in solar inverters, UPS systems, etc., to achieve conversion of DC power to AC power, and can be used for home and commercial purposes.
2. Electric vehicle drive module: Due to its high voltage and high current capability, this product is suitable for electric vehicle drive modules, such as motor controllers and battery management systems.
3. Industrial power module: In the field of industrial power supply, VBMB165R10 can be used as a power switch in industrial power modules to provide stable power output and current regulation.
4. Automotive electronic modules: As a power switch in automotive electronic control circuits, this product can be used in automotive electronic modules, such as engine control units (ECUs) and vehicle chargers.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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