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VBMB165R09S 产品详细

产品简介:

Product introduction:

VBMB165R09S is a single N-type field effect transistor produced by the VBsemi brand. It uses SJ_Multi-EPI technology and is packaged as TO220F. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 9A. This model of product is suitable for a variety of fields and modules, with high performance and reliability.

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产品参数:

Detailed parameter description:

1. VDS (drain-source voltage): 650V
2. VGS (gate-source voltage): ㊣30V
3. Vth (threshold voltage): 3.5V
4. Drain resistance (m次) when VGS=10V: 550m次
5. ID (drain current): 9A
6. Technology: SJ_Multi-EPI
7. Package: TO220F

领域和模块应用:





Examples of applicable fields and modules:

1. Industrial power module: VBMB165R09S can be used as a switching power supply in industrial power modules to provide stable power output.
2. Electric vehicle controller: This type of transistor is suitable for current regulation and switching control in electric vehicle controllers.
3. Solar inverter: In solar inverter, VBMB165R09S can be used to achieve DC to AC conversion and ensure high efficiency and stability of the system.
4. Power tool driver: Suitable for motor drivers in power tools to help achieve efficient control and power output of the motor.

The above is an introduction to the VBMB165R09S product, detailed parameter descriptions, and examples of applicable fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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