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VBMB165R07SE 产品详细

产品简介:

Product introduction:
VBMB165R07SE is a single N-channel field effect transistor launched by the VBsemi brand. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product is manufactured using SJ_Deep-Trench technology and has excellent performance and stability. The package form is TO220F.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 600
- Maximum drain current (ID): 7A
- Technology: SJ_Deep-Trench

领域和模块应用:

Examples of applicable fields and modules:
1. Power switch module: Because VBMB165R07SE has a high drain-source voltage and on-current, it is suitable for power switch modules, such as switching power supplies, inverters, etc.
2. Electric vehicle motor control module: The high voltage and current characteristics of this product make it suitable for electric vehicle motor control modules to achieve power output and drive control of electric vehicles.
3. Inverter air conditioning module: VBMB165R07SE can be used as the power switch in the inverter air conditioner module to realize power regulation and control of the inverter air conditioner and improve the energy efficiency of the air conditioning system.
4. Solar inverter: This product is suitable for power switch modules in solar inverters, which can achieve stable operation and efficient conversion of solar power generation systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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