产品参数:
### Detailed parameter description
- **Type:** Single N MOSFET
- **Maximum drain-source voltage (VDS):** 650V
- **Maximum Gate-Source Voltage (VGS):** ㊣30V
- **Threshold voltage (Vth):** 3.5V
- **Gate-source resistance (RDS(on)) @ VGS=4.5V:** 1050 m次
- **Gate-source resistance (RDS(on)) @ VGS=10V:** 840 m次
- **Maximum drain current (ID):** 6A
- **Technology:** Plannar
领域和模块应用:
### Applicable fields and modules
1. **Power management module:** VBMB165R06 has a high drain-source voltage and moderate drain current, and is suitable for switching power supplies, DC-DC converters and other applications in power management modules. Its low gate-source resistance and high drain current enable efficient power conversion.
2. **Industrial motor drive:** In the field of industrial motor drive, VBMB165R06 can be used as a switching device to implement various types of motor drives. Its high drain-source voltage and moderate drain current make it suitable for high-voltage circuits and high-power circuits in industrial motor drive systems.
3. **Solar Inverter:** In solar inverter, VBMB165R06 can be used as a switching device to realize energy conversion from solar panels to AC grid. Its high drain-source voltage and moderate drain current make it suitable for high voltage and high power inverter circuits.
4. **Electric vehicle charging module:** This product can be used as a switching device in the electric vehicle charging module to realize the charging and protection functions of the battery. Its high drain-source voltage and moderate drain current can meet the high voltage and high power requirements of electric vehicle charging modules.
The above is an introduction to the product VBMB165R06, detailed parameter descriptions, and examples of applicable fields and modules in the form of paragraphs.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性