产品参数:
Detailed parameter description:
- Brand: VBsemi
- Model: VBMB165R05SE
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 750
- Maximum drain current (ID): 5A
- Technology: SJ_Deep-Trench
-Package: TO220F
领域和模块应用:
Examples of applicable fields and modules:
1. Power module: VBMB165R05SE can be used to design various power modules to ensure stable and reliable power output, suitable for household appliances, power tools and other applications.
2. Industrial control system: In industrial control systems that need to withstand high voltage and large current, it can be used as a power switching device to ensure the performance and stability of the equipment.
3. Solar inverter: suitable for power conversion and control circuits in solar inverters, providing high efficiency and reliability energy conversion solutions.
4. Automotive electronic systems: In automotive electronic systems, it can be used to design on-board power management and drive modules to provide reliable power output and control.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性