Product introduction:
VBMB165R05S is a VBsemi brand Single N MOSFET with a voltage resistance of 650V, a maximum gate-source voltage of 30V, and a threshold voltage of 3.5V. The device uses SJ_Multi-EPI technology and is packaged in TO220F. Suitable for a variety of power supply and power control applications.
Detailed parameter description:
- Model: VBMB165R05S
- Brand: VBsemi
- Type: Single N MOSFET
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-to-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V: 1000m次
- Maximum drain current (ID): 5A
- Technology: SJ_Multi-EPI
-Package: TO220F
Example application:
1. Power module: VBMB165R05S is suitable for power switches of power modules, such as inverters and switching power supplies, providing reliable power conversion and control functions.
2. Solar inverter: In solar photovoltaic systems, this device can be used in the DC-AC conversion stage of the inverter to convert solar energy into usable alternating current.
3. Electric vehicle charging piles: As a power switching element in electric vehicle charging piles, VBMB165R05S can support high voltage and current, providing safe and efficient charging functions.
4. Industrial automation equipment: This device is suitable for power switch modules in industrial robots, automation equipment, PLC and other systems to ensure stable operation of equipment and efficient energy conversion.
5. LED lighting control: In LED lighting systems, VBMB165R05S can be used for power switch control of LED drive circuits to help realize energy saving and dimming functions of the lighting system.
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