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VBMB165R04SE 产品详细

产品简介:

Product introduction:
VBMB165R04SE is a single N-channel field effect transistor launched by the VBsemi brand. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product is manufactured using SJ_Deep-Trench technology and has excellent performance and stability. The package form is TO220F.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 950
- Maximum drain current (ID): 4A
- Technology: SJ_Deep-Trench

领域和模块应用:

Examples of applicable fields and modules:
1. Power switch module: The medium voltage and current characteristics of VBMB165R04SE make it suitable for power switch modules, such as power adapters, switching power supplies, etc.
2. LED drive module: This product can be used as a power switch in the LED drive module to achieve efficient drive and control of LED lights and provide stable lighting effects.
3. Power tool power module: VBMB165R04SE can be used as a power switch in power tool power modules, such as electric drills, electric saws, etc., to achieve efficient power supply and control of power tools.
4. Solar inverter: This product is suitable for power switch modules in solar inverters, which can achieve stable operation and efficient conversion of solar power generation systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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