产品简介：
Product introduction:
VBsemi's VBMB165R02 is a Single N field effect transistor manufactured using Plannar technology. Features a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. At VGS=10V, the drain-source resistance (RDS(on)) is 1700mΩ and the maximum drain current (ID) is 2A. The package form is TO220F.
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产品参数：
Detailed parameter description:
- Voltage parameters: drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ㊣30V, threshold voltage (Vth) is 3.5V.
- Current parameters: When VGS=10V, the drain-source resistance (RDS(on)) is 1700m次, and the maximum drain current (ID) is 2A.
- Technology: Made with Plannar technology.
领域和模块应用：
Examples of applicable fields and modules:
1. Industrial power module: Since VBMB165R02 has moderate drain-source voltage and current, it can be used in switching power supplies or inverters in industrial power modules.
2. High-frequency modulation: Its low drain-source resistance makes it suitable for high-frequency modulation modules, such as RF power amplifiers in wireless communication systems.
3. Lighting control: In the field of lighting control, VBMB165R02 can be used for LED drivers or power switches in lighting systems.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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