产品参数:
VBMB165R01 detailed parameter description:
- Model: VBMB165R01
- Brand: VBsemi
-Package: TO220F
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 8500
- Drain current (ID): 1A
- Technology: Plannar
领域和模块应用:
Application examples:
1. Industrial power module: VBMB165R01 can be used in switching power supplies, inverters and voltage regulators in industrial power modules, providing high performance and reliability.
2. Automotive electronics field: This product is suitable for DC-DC converters, electric vehicle controllers and other modules in automotive electronic systems, and has good electrical performance and temperature characteristics.
3. Solar inverter: In a solar inverter, VBMB165R01 can be used as a key power switching device to convert the DC power generated by the solar panel into AC power.
Please note that these are examples only and actual application will depend on specific design and system requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性