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VBMB1607V3 产品详细

产品简介:

VBMB1607V3 is a single N-type MOSFET with a core voltage (VDS) of 60V, a gate-source voltage range (VGS) of ±20V, and a threshold voltage (Vth) of 3V. At a gate-source voltage of 4.5V, the drain-source resistance is 38mΩ; at a gate-source voltage of 10V, the drain-source resistance is 5mΩ. Maximum drain current is 120A. This product is manufactured using Trench technology and is packaged in TO220F.

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产品参数:

Product model: VBMB1607V3
Brand: VBsemi
parameter:
- Type: Single N
- Core voltage (VDS): 60V
- Gate-source voltage range (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at 4.5V gate-source voltage: 38
- Drain-source resistance (m次) at 10V gate-source voltage: 5
- Maximum drain current (ID): 120A
- Technology: Trench
Package: TO220F

领域和模块应用:

Application introduction:
1. Power tools: VBMB1607V3 has moderate drain current and low drain-source resistance, making it suitable for use in power switches and motor drive modules in power tools. Its high threshold voltage and high current provide reliable power output, and its low resistance helps reduce power loss.
2. Household appliances: In household appliances, power switching devices are needed to control the switching and adjustment of various household appliances. The high voltage and moderate current characteristics of VBMB1607V3 make it an ideal choice in household appliances, capable of providing stable and reliable switching control functions, such as power switches and lighting regulators.
3. Electric vehicle charger: In an electric vehicle charger, power switching devices are required to implement battery charging and current regulation functions. The high voltage and high current of VBMB1607V3 can meet the high requirements of electric vehicle chargers for power switching devices, providing efficient charging performance and reliable current regulation functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

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