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VBMB1603 产品详细

产品简介:

VBsemi's VBMB1603 is a single-channel N-channel field effect transistor (Single N), manufactured using Trench process. Its main parameters include: maximum drain-source voltage (VDS) of 60V, maximum gate-source voltage (VGS) is ±20V, the threshold voltage (Vth) is 3V, and the on-resistance at different gate-source voltages, etc. The device is packaged in TO220F and is suitable for various applications.

VBMB1603 is suitable for electronic systems requiring medium power and medium current, such as modules in power switches, industrial control and automotive electronics.

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产品参数:

Product model: VBMB1603
Brand: VBsemi
parameter:
-Single N
- VDS(V): 60
-VGS(㊣V): 20
-Vth(V): 3
- VGS=4.5V(m次): 5
- VGS=10V(m次): 3
- ID (A): 210
- Technology: Trench
Package: TO220F

领域和模块应用:


Application examples:
1. **Power Switch Module**: The moderate power and low on-resistance of VBMB1603 make it very suitable for use in switching power supply circuits in power switch modules. For example, in power adapters or power converters, it can be used as a switching tube to help achieve efficient power conversion and stable output.

2. **Industrial Control Module**: Since VBMB1603 has high maximum drain-source voltage and current handling capability, it is also suitable for use in motor drive circuits in industrial control modules. For example, in industrial machinery control systems, it can be used as a motor controller to help achieve precise control and efficient operation of various industrial equipment.

3. **Automotive Electronic Module**: The high voltage withstand capability and high temperature resistance of this device make it widely used in automotive electronic modules. For example, in automotive electric systems, it can be used as a protection switch in the battery management system to help protect the vehicle battery from overcurrent and overvoltage damage.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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