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VBMB15R07S 产品详细

产品简介:

VBMB15R07S is a Single N structure power MOSFET. Its main features include high voltage withstand capability, low threshold voltage, low drain-source resistance, and suitability for multiple epitaxial processes (SJ_Multi-EPI). Its TO220F package makes it suitable for Scenarios that require high voltage endurance, low threshold voltage and high current endurance include industrial power modules, electric vehicle charging piles, industrial automation control modules and other fields.

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产品参数:

parameter:
- Structure type: Single N
- Rated drain-source voltage (VDS): 500V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (VGS=10V): 550 m次
- Drain current (ID): 7A
- Technology: SJ_Multi-EPI
Package: TO220F

领域和模块应用:

for example:
1. Industrial power module:
Because VBMB15R07S has high drain-source voltage (500V) and drain current (7A) characteristics, it is suitable for use as a switching tube in industrial power modules to control and regulate high-voltage and high-current power output.

2. Electric vehicle charging pile:
In electric vehicle charging piles, power MOSFETs with high voltage and current resistance are required to achieve fast charging functions. The VBMB15R07S's high voltage tolerance and low threshold voltage characteristics make it an ideal choice in charging piles.

3. Industrial automation control module:
In the field of industrial automation control, power MOSFETs are required to achieve precise control of various industrial equipment. The VBMB15R07S's low drain-source resistance and high current handling capability make it suitable for power switching and current regulation functions in industrial automation control modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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