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VBMB155R18 产品详细

产品简介:

VBMB155R18 is a Single N field effect transistor with moderate drain current (ID) and drain-source voltage (VDS). It is suitable for low to medium power power modules and industrial motor drive modules.

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产品参数:

parameter:
- Polarity: Single N
- Maximum drain-source voltage (VDS): 550V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3V
- On-resistance (m次) when VGS=10V: 260
- Maximum drain current (ID): 18A
- Technology: Plannar
Package: TO220F

领域和模块应用:

Product model: VBMB155R18
Brand: VBsemi
Affiliated company: Shenzhen Weibi Semiconductor Co., Ltd.


This product is suitable for the following areas and modules:
1. Low to medium power power modules:
With moderate drain current (ID) and drain-source voltage (VDS), it is suitable for low to medium power power modules, such as household power adapters, industrial power supplies and electronic equipment power managers, etc., and can provide stable and reliable power output.

2. Industrial motor drive module:
It is suitable for industrial motor drive modules, such as motor controllers, transmission systems and frequency converters, etc. It can provide reliable motor drive and precise speed control to meet the needs of industrial equipment for high efficiency and high reliability.

3. Automotive electronic modules:
It is suitable for automotive electronic modules, such as on-board chargers, on-board power managers and electric vehicle motor controllers, etc. It can provide stable power output and high-efficiency electric vehicle drive, improving vehicle performance and safety.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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