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VBMB155R01 产品详细

产品简介:

This product is a single N-type MOSFET with a maximum drain voltage of 550V and a rated current of 1A. Adopting Plannar technology, it provides stable performance and reliable work. It is suitable for the design and manufacturing of various modules in the fields of low-power power supplies, low-voltage circuit control, analog signal switches, and battery protection.

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产品参数:

Product model: VBMB155R01
Brand: VBsemi
Affiliated company: Shenzhen Weibi Semiconductor Co., Ltd.
parameter:
- Type: Single N-type MOSFET
- Maximum drain voltage (VDS): 550V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Rated current (ID): 1A
- Technology: Plannar
-Package: TO220F

领域和模块应用:


Application introduction:
This product is suitable for the following areas and modules:
1. Low-power power module: Due to its low rated current characteristics, it can be used to design and manufacture various types of low-power power modules, such as mobile phone chargers, power management modules for electronic equipment, etc.
2. Low-voltage power switch module: In the field of low-voltage circuit control, this product can be used to design and manufacture low-voltage power switch modules, such as power switch modules for household appliances, power management modules for low-power equipment, etc.
3. Analog signal switch module: In the field of analog circuit control, this product can be used to design and manufacture analog signal switch modules, such as signal switch modules for audio equipment, analog switch modules for control circuits, etc.
4. Battery protection module: In the field of battery management, this product can be used to design and manufacture various types of battery protection modules, such as lithium battery protection modules, battery management modules, etc., to protect batteries from overcharge, overdischarge and short circuit and other hazards.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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