产品参数:
parameter:
- Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 30V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- On-resistance (RDS(on)) at VGS=4.5V: 2 m次
- On-resistance (RDS(on)) at VGS=10V: 1 m次
- Maximum drain current (ID): 68A
- Technology: Trench
Package: TO220F
领域和模块应用:
This MOSFET is suitable for many fields and modules, here are some examples:
1. Electric vehicle module: Electric control modules suitable for electric vehicles and electric bicycles, such as motor drivers and battery management systems, providing efficient power conversion and stable motor control.
2. Industrial power module: In industrial equipment and machinery, it can be used in high-power industrial power supplies and power inverters and other modules to provide reliable power supply and stable power output.
3. Power amplification module: suitable for modules such as audio amplifiers and power amplifiers, which can achieve high-quality audio amplification and power amplification and provide clear and stable audio output.
4. High-performance power module: Suitable for power management systems in servers and data centers, such as UPS and server power supplies, providing efficient power conversion and reliable power supply.
5. Power electronic modules: In power electronic products such as variable frequency air conditioners and variable frequency drives, they can be used in power factor correction and power conditioning modules to provide stable power supply and energy-saving effects.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性