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VBMB1303 产品详细

产品简介:

VBMB1303 is an TO220F-packaged N-channel MOSFET, utilizing Trench technology.

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产品参数:

parameter:
- Type: Unipolar N-type
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at VGS=4.5V: 5
- Drain-source resistance (m次) at VGS=10V: 4
- Drain current (ID): 140A
- Technology: Trench
Package: TO220F

领域和模块应用:

Product model: VBMB1303
This VBMB1303 product is suitable for the following fields and modules:
1. Power module: Due to its high drain current and low drain-source resistance, it can be used to design high-performance switching power supply modules such as DC-DC converters and AC-DC converters. DC) converter.
2. Motor drive: Due to its high voltage and high drain current characteristics, it can be used in motor drive modules, such as electric vehicle controllers and industrial motor drivers.
3. Inverter: Suitable for designing inverter modules, such as solar inverters and power electronic inverters, to convert DC power into AC power or adjust the frequency and voltage of AC power.
4. Supercapacitor charging and discharging module: Due to its high current characteristics, it can be used to design modules for supercapacitor charging and discharging for energy storage and release applications, such as renewable energy systems and electric vehicle braking energy recovery systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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