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VBMB1254N 产品详细

产品简介:

VBMB1254N is a high-performance single-channel N-channel field effect transistor, suitable for high-power electronic equipment and modules. Its features include high rated drain-source voltage, low drain current and high reliability, enabling excellent performance in a variety of high-power applications. Suitable for high-power electronic equipment and modules, including power inverters, high-power motor drives and power supply systems.

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产品参数:

parameter:
- Type: Single N channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 250V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source on-resistance (m次) at VGS=10V: 40
- Maximum drain current (ID): 40A
- Technology: Trench structure (Trench)
Package: TO220F

领域和模块应用:

Application examples:
1. Power inverter: VBMB1254N can be used as a power switch in a power inverter module and is used in high-power applications such as solar inverters and industrial inverters to achieve DC to AC conversion.
2. High-power motor driver: In electric vehicles, motor control and industrial drive systems, VBMB1254N can be used as power switches and current regulators in motor driver modules to provide reliable motor control and efficient energy conversion.
3. Power supply module: In the power supply system, VBMB1254N can be used to stabilize power output, voltage regulation and overload protection to ensure the stability and reliability of the power system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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