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VBMB1206N 产品详细

产品简介:

VBMB1206N is a single-channel N-type MOS field effect transistor (Single N MOSFET), suitable for circuits up to 200V. Its gate-to-source voltage (VGS) is ±20V and its threshold voltage (Vth) is 3V. When VGS=4.5V, the drain-source on-resistance is 104mΩ; when VGS=10V, the drain-source on-resistance is 48mΩ. Drain current (ID) is rated at 40A. Using Trench technology, it has stable performance and efficient characteristics. The package form is TO220F, which is suitable for certain heat dissipation requirements.

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产品参数:

parameter:
- MOSFET type: Single N
- Rated drain-source voltage (VDS): 200V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source on-resistance (m次) at VGS=4.5V: 104
- Drain-source on-resistance (m次) at VGS=10V: 48
- Drain current (ID): 40A
- Technology: Trench
Package: TO220F

领域和模块应用:

**Application introduction and examples:**
1. **Electric vehicle power module:** VBMB1206N is suitable for electric vehicle power modules, such as motor controllers and inverters. Its parameters can meet the requirements of electric vehicles for high power output and control. The TO220F package helps dissipate heat and maintain stable operation of the module.

2. **Industrial power conversion module:** In the industrial field, VBMB1206N can be used in power conversion modules, such as power inverters and DC-DC converters. Its high voltage and current characteristics can support the needs of industrial equipment for power conversion and control. The TO220F package is suitable for installation and heat dissipation needs in industrial environments.

3. **Solar Inverter Module:** Solar inverters need to handle high voltage and large current, and the parameters of VBMB1206N meet these requirements. It can be used in solar inverter modules to convert DC power generated by solar panels into AC power. The TO220F package is suitable for installation in outdoor environments and can effectively dissipate heat to ensure the stable operation of the inverter.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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