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VBMB1202M 产品详细

产品简介:

VBsemi VBMB1202M is a single N-type field effect transistor product.
, suitable for applications requiring high voltage, high power and high efficiency, including but not limited to power modules, automotive electronics, industrial control and welding equipment, etc.

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产品参数:

has the following parameters:
- VDS (drain-source voltage): 200V
- VGS (gate-source voltage): ㊣20V
- Vth (gate threshold voltage): 3V
- Drain-source on-resistance when VGS=10V: 200m次
- Maximum drain current (ID): 18A
- Technology type: Trench

The package is TO220F.

领域和模块应用:

This device is suitable for a variety of fields and modules. The specific applications are as follows:

1. **Power Module**: Since VBsemi VBMB1202M has a high drain-source voltage (200V) and drain current (18A), it is suitable for high-voltage and high-power applications such as switching power supply modules and DC-DC converters. The TO220F package facilitates heat dissipation, making it more suitable for high-power applications.

2. **Automotive Electronics**: In the field of automotive electronics, this device can be used in vehicle power management modules, motor control modules, etc. to meet the high voltage and high power requirements of automotive electronic systems.

3. **Industrial Control**: VBMB1202M is also suitable for industrial control fields, such as motor driver modules, switch controller modules, etc., to achieve high efficiency and precise control.

4. **Welding equipment**: Due to its high voltage and high current characteristics, this device can also be used in switch modules in welding equipment to provide stable power output.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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